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IPB200N25N3GATMA1
Product Overview
Category
The IPB200N25N3GATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- High ruggedness and reliability
Package
The IPB200N25N3GATMA1 is typically available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 250V
- Current Rating: 200A
- RDS(ON): 0.008 ohms
- Gate-Source Voltage (Max): ±20V
- Continuous Drain Current (at 25°C): 200A
- Power Dissipation: 625W
Detailed Pin Configuration
The IPB200N25N3GATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage and current handling capacity
- Low on-state resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Robust construction for reliable performance in demanding applications
Advantages
- Suitable for high-power applications
- Low conduction losses
- Enhanced thermal performance
- High reliability and ruggedness
Disadvantages
- Higher cost compared to lower-rated MOSFETs
- Larger physical footprint due to higher power handling capability
Working Principles
The IPB200N25N3GATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPB200N25N3GATMA1 is widely used in applications such as: - Switched-mode power supplies - Motor control systems - Inverters and converters - High-power amplifiers - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB200N25N3GATMA1 include: - IRFB7434PbF - FDPF3860T - IXFN360N10T
This concludes the overview of the IPB200N25N3GATMA1 power MOSFET, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IPB200N25N3GATMA1 w rozwiązaniach technicznych
What is the maximum drain-source voltage of IPB200N25N3GATMA1?
- The maximum drain-source voltage of IPB200N25N3GATMA1 is 250V.
What is the continuous drain current rating of IPB200N25N3GATMA1?
- The continuous drain current rating of IPB200N25N3GATMA1 is 200A.
What is the on-state resistance (RDS(on)) of IPB200N25N3GATMA1?
- The on-state resistance (RDS(on)) of IPB200N25N3GATMA1 is typically 0.0018 ohms.
What is the gate threshold voltage of IPB200N25N3GATMA1?
- The gate threshold voltage of IPB200N25N3GATMA1 is typically 2.5V.
What is the operating temperature range of IPB200N25N3GATMA1?
- The operating temperature range of IPB200N25N3GATMA1 is -55°C to 175°C.
Is IPB200N25N3GATMA1 suitable for high-power applications?
- Yes, IPB200N25N3GATMA1 is designed for high-power applications due to its high current and voltage ratings.
Does IPB200N25N3GATMA1 require a heat sink for thermal management?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal management.
Can IPB200N25N3GATMA1 be used in automotive applications?
- Yes, IPB200N25N3GATMA1 is suitable for automotive applications due to its rugged construction and high performance.
What are the typical applications for IPB200N25N3GATMA1?
- Typical applications for IPB200N25N3GATMA1 include motor control, power supplies, inverters, and industrial automation.
Is IPB200N25N3GATMA1 RoHS compliant?
- Yes, IPB200N25N3GATMA1 is RoHS compliant, making it suitable for environmentally conscious designs.