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BC858AE6327HTSA1
Product Overview
Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power, high voltage, high current
Package: SOT-23
Essence: Silicon epitaxial planar NPN transistor
Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Collector-Emitter Voltage: 30V
- Collector-Base Voltage: 30V
- Emitter-Base Voltage: 5V
- Collector Current (DC): 100mA
- Power Dissipation: 225mW
- Transition Frequency: 150MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Emitter
- Base
- Collector
Functional Features
- High current gain
- Low noise
- High transition frequency
- Suitable for low voltage, low power applications
Advantages and Disadvantages
Advantages: - Small package size - High current gain - Low power consumption
Disadvantages: - Limited power dissipation - Limited voltage and current ratings
Working Principles
The BC858AE6327HTSA1 is a small signal NPN transistor that operates by amplifying small variations in input voltage or current to produce larger output signals. It can also be used for switching applications where it acts as an electronic switch.
Detailed Application Field Plans
The BC858AE6327HTSA1 is commonly used in audio amplifiers, signal processing circuits, and low power switching applications. Its small size and low power consumption make it suitable for portable electronic devices and battery-powered applications.
Detailed and Complete Alternative Models
- BC847AE6327HTSA1
- BC856BMTF
- BC848BMTF
This completes the entry for BC858AE6327HTSA1, providing comprehensive information about its product details, specifications, features, and applications.
Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem BC858AE6327HTSA1 w rozwiązaniach technicznych
What is BC858AE6327HTSA1?
- BC858AE6327HTSA1 is a general-purpose PNP transistor commonly used in electronic circuits for amplification and switching applications.
What are the key specifications of BC858AE6327HTSA1?
- The key specifications include a maximum collector current of 100mA, a maximum collector-emitter voltage of 30V, and a maximum power dissipation of 200mW.
How can BC858AE6327HTSA1 be used in amplifier circuits?
- BC858AE6327HTSA1 can be used as a small-signal amplifier in audio and other low-power applications due to its high current gain and low noise characteristics.
In what types of switching applications is BC858AE6327HTSA1 commonly used?
- BC858AE6327HTSA1 is often used in low-power switching applications such as signal routing, level shifting, and interface circuitry.
What are the typical operating conditions for BC858AE6327HTSA1?
- The typical operating conditions include a collector current of 10mA, a collector-emitter voltage of 5V, and a base current of 1mA.
Can BC858AE6327HTSA1 be used in high-frequency applications?
- BC858AE6327HTSA1 is not suitable for high-frequency applications due to its limited transition frequency and capacitance characteristics.
What are the recommended storage and operating temperature ranges for BC858AE6327HTSA1?
- The recommended storage temperature range is -55°C to +150°C, and the recommended operating temperature range is -45°C to +85°C.
Are there any common alternative transistors that can be used in place of BC858AE6327HTSA1?
- Common alternatives include BC327, 2N3906, and 2N4403, which have similar PNP transistor characteristics.
What are the typical package options available for BC858AE6327HTSA1?
- BC858AE6327HTSA1 is typically available in SOT-23 and SOT-323 surface-mount packages, as well as TO-92 through-hole packages.
Where can I find detailed datasheets and application notes for BC858AE6327HTSA1?
- Detailed datasheets and application notes for BC858AE6327HTSA1 can be found on the manufacturer's website or through authorized distributors.