Diodes Incorporated
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DDTC114GE-7-F
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DDTC114GE-7-F Product Overview

Introduction

The DDTC114GE-7-F is a versatile electronic component that belongs to the category of NPN transistors. This product is commonly used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: NPN Transistor
  • Use: Amplification, Switching
  • Characteristics: High voltage capability, low saturation voltage
  • Package: SOT-23
  • Essence: Small signal transistor for general purpose amplification and switching applications
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The DDTC114GE-7-F has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Small footprint
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • Suitable for high-speed switching applications
  • Compact package size
  • RoHS compliant

Disadvantages

  • Limited maximum collector current compared to other transistors
  • Relatively narrow operating temperature range

Working Principles

The DDTC114GE-7-F operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

This transistor is widely used in the following applications: - Audio amplifiers - Signal amplification circuits - Switching circuits - Oscillator circuits - Sensor interfaces

Detailed and Complete Alternative Models

  • BC847B: Similar NPN transistor with higher collector current rating
  • 2N3904: General-purpose NPN transistor with comparable characteristics
  • MMBT3904: Surface-mount equivalent with similar specifications

In conclusion, the DDTC114GE-7-F NPN transistor offers a compact and efficient solution for various electronic applications, especially those requiring high-speed switching and amplification capabilities.

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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem DDTC114GE-7-F w rozwiązaniach technicznych

  1. What is the operating temperature range of DDTC114GE-7-F?

    • The operating temperature range of DDTC114GE-7-F is typically -55°C to +150°C.

  2. What is the maximum collector current of DDTC114GE-7-F?

    • The maximum collector current of DDTC114GE-7-F is 100mA.

  3. What is the typical gain of DDTC114GE-7-F?

    • The typical gain of DDTC114GE-7-F is 100-300.

  4. What is the power dissipation of DDTC114GE-7-F?

    • The power dissipation of DDTC114GE-7-F is 200mW.

  5. What are the package dimensions of DDTC114GE-7-F?

    • The package dimensions of DDTC114GE-7-F are 1.0mm x 0.6mm x 0.35mm.

  6. What is the voltage rating of DDTC114GE-7-F?

    • The voltage rating of DDTC114GE-7-F is 50V.

  7. Is DDTC114GE-7-F RoHS compliant?

    • Yes, DDTC114GE-7-F is RoHS compliant.

  8. What are the typical applications of DDTC114GE-7-F?

    • DDTC114GE-7-F is commonly used in audio amplification, signal processing, and switching applications.

  9. Does DDTC114GE-7-F require external biasing?

    • Yes, DDTC114GE-7-F requires external biasing for proper operation.

  10. Is DDTC114GE-7-F suitable for surface mount technology (SMT) applications?

    • Yes, DDTC114GE-7-F is designed for surface mount technology (SMT) applications.