S29GL01GP13TFIV10

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Part Number: S29GL01GP13TFIV10
• Memory Type: NOR Flash
• Memory Size: 1 Gigabit (128 Megabytes)
• Organization: 128M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (Max)
• Erase/Program Suspend/Erase Suspend: Yes
• Package Type: 48-ball Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The S29GL01GP13TFIV10 has a total of 48 pins arranged as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. CE#
43. WE#
44. RE#
45. WP#
46. RY/BY#
47. CLE#
48. ALE#

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory retains stored data even when power is removed.
• Erase and program operations can be suspended, allowing flexibility in managing memory operations.
• Wide operating temperature range makes it suitable for various environments.
• Low power consumption extends battery life in portable devices.

Advantages

• Large storage capacity allows for storing a significant amount of data.
• High-speed operations facilitate quick data retrieval and storage.
• Non-volatile nature ensures data integrity even during power outages.
• Low power consumption reduces energy usage and extends device battery life.

Disadvantages

• Parallel interface may limit compatibility with newer systems that primarily use serial interfaces.
• Higher cost compared to lower-capacity flash memory options.
• Limited endurance compared to other types of non-volatile memory technologies.

Working Principles

The S29GL01GP13TFIV10 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. The presence or absence of trapped electrons determines the binary state of each cell, representing the stored data. The memory cells are organized into an array, and data can be read from or written to specific memory locations using the provided address and control signals.

Detailed Application Field Plans

The S29GL01GP13TFIV10 is commonly used in various electronic devices that require non-volatile data storage, such as:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics (e.g., digital cameras, set-top boxes)
5. Networking equipment

Detailed and Complete Alternative Models

Some alternative models to the S29GL01GP13TFIV10 include:

1. S29GL512P11TFI010 - 512 Megabit NOR Flash Memory
2. S29GL02GP13TFI020 - 2 Gigabit NOR Flash Memory
3. S29GL04GP13TFI040 - 4 Gigabit NOR Flash Memory
4. S29GL08GP13TFI080 - 8 Gigabit NOR Flash Memory

These alternative models offer different memory sizes to cater to varying storage requirements.

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