AS4C8M16D1-5TINTR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-density storage
  • Low power consumption
  • Fast data transfer rate
• Package: TQFP (Thin Quad Flat Package)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Part Number: AS4C8M16D1-5TINTR
• Organization: 8 Meg x 16
• Voltage: 3.3V
• Speed: 5ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The AS4C8M16D1-5TINTR IC has a total of 48 pins. The pin configuration is as follows:

| Pin No. | Name | Description | |---------|------|-------------| | 1 | VDD | Power supply voltage | | 2 | DQ0 | Data input/output bit 0 | | 3 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 46 | DQ14 | Data input/output bit 14 | | 47 | DQ15 | Data input/output bit 15 | | 48 | VSS | Ground |

Functional Features

• High-speed data access
• Non-volatile storage
• Self-refresh capability
• Auto-refresh functionality
• Low standby power consumption

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast data transfer rate - Low power consumption - Suitable for various applications

Disadvantages: - Requires periodic refresh cycles - Sensitive to electrical noise

Working Principles

The AS4C8M16D1-5TINTR is a dynamic random access memory (DRAM) module. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When data is read or written, the memory controller sends appropriate signals to the IC, allowing for fast data access and transfer.

Detailed Application Field Plans

The AS4C8M16D1-5TINTR memory module finds applications in various fields, including: 1. Computer systems 2. Networking equipment 3. Telecommunications devices 4. Consumer electronics 5. Industrial automation

Detailed and Complete Alternative Models

1. AS4C8M16D1-5BINTR
   • Similar specifications and features as AS4C8M16D1-5TINTR
   • Different package: BGA (Ball Grid Array)
2. AS4C8M16D1-5GINTR
   • Similar specifications and features as AS4C8M16D1-5TINTR
   • Different voltage: 1.8V
   • Different speed: 5ns

(Note: This list is not exhaustive and there may be other alternative models available.)

This entry provides an overview of the AS4C8M16D1-5TINTR memory module, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.