AS4C64M16D2A-25BAN

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Single unit

Specifications

• Part Number: AS4C64M16D2A-25BAN
• Organization: 64M words x 16 bits x 2 banks
• Operating Voltage: 2.5V ±0.2V
• Clock Frequency: 200 MHz
• Access Time: 3 ns (max)
• Refresh: Auto-refresh and self-refresh modes
• Temperature Range: Commercial (0°C to +70°C)

Detailed Pin Configuration

The AS4C64M16D2A-25BAN has a total of 90 pins, which are arranged as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. DQM0
21. DQM1
22. VSSQ
23. A0
24. A1
25. A2
26. A3
27. A4
28. A5
29. A6
30. A7
31. A8
32. A9
33. A10
34. A11
35. A12
36. A13
37. A14
38. A15
39. VDDQ
40. A16
41. A17
42. A18
43. A19
44. A20
45. A21
46. A22
47. A23
48. A24
49. A25
50. A26
51. A27
52. A28
53. A29
54. A30
55. A31
56. VSSQ
57. WE#
58. CAS#
59. RAS#
60. CS#
61. CKE
62. CK
63. VDD
64. VSS
65. DQ16
66. DQ17
67. DQ18
68. DQ19
69. DQ20
70. DQ21
71. DQ22
72. DQ23
73. VDDQ
74. DQ24
75. DQ25
76. DQ26
77. DQ27
78. DQ28
79. DQ29
80. DQ30
81. DQ31
82. VSSQ
83. DM0
84. DM1
85. VSSQ
86. ODT0
87. ODT1
88. VREF
89. VSS
90. VDD

Functional Features

• High-speed operation allows for quick data access.
• Low power consumption helps conserve energy.
• Large storage capacity enables storing a significant amount of data.
• Auto-refresh and self-refresh modes ensure data integrity during extended periods of inactivity.

Advantages and Disadvantages

Advantages: - Fast data access speed - Energy-efficient operation - Ample storage capacity

Disadvantages: - Relatively high cost compared to other memory technologies - Requires periodic refresh cycles to maintain data integrity

Working Principles

The AS4C64M16D2A-25BAN is a dynamic random access memory (DRAM) module. It stores data in capacitors within its memory cells, which are organized into rows and columns. To read or write data, the module activates specific rows and columns using address signals provided by the system. The stored charge in the capacitors represents the binary data, which can be accessed and manipulated through the module's pins.

Detailed Application Field Plans

The AS4C64M16D2A-25BAN memory module finds applications in various electronic devices, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Consumer electronics (e.g., gaming consoles, set-top boxes)

Its high-speed operation and large storage capacity make it suitable for applications that require quick data access and ample memory space.

Detailed and Complete Alternative Models

1. AS