AS4C64M16D1-6TIN

Product Overview

Category

AS4C64M16D1-6TIN belongs to the category of dynamic random-access memory (DRAM) chips.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

AS4C64M16D1-6TIN is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C64M16D1-6TIN lies in its ability to provide fast and efficient data storage and retrieval for electronic devices.

Packaging/Quantity

AS4C64M16D1-6TIN is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Part Number: AS4C64M16D1-6TIN
• Memory Type: DDR3 SDRAM
• Organization: 64M words x 16 bits
• Operating Voltage: 1.5V
• Speed Grade: 6 (DDR3-1600)
• Interface: Parallel
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AS4C64M16D1-6TIN chip has a total of 78 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CS#
42. DM0
43. DM1
44. VSS
45. VREF
46. VDD
47. CLK
48. CKE
49. ODT
50. RESET#
51. VSS
52. VDD
53. DQS0
54. DQS#0
55. DQS1
56. DQS#1
57. DQS2
58. DQS#2
59. DQS3
60. DQS#3
61. VSS
62. VDD
63. NC
64. VSS
65. VDD
66. VSS
67. VDD
68. VSS
69. VDD
70. VSS
71. VDD
72. VSS
73. VDD
74. VSS
75. VDD
76. VSS
77. VDD
78. VSS

Functional Features

• High-speed data transfer
• Auto-refresh and self-refresh modes for efficient power management
• Error correction code (ECC) support for data integrity
• Burst mode operation for improved performance
• On-die termination (ODT) for signal integrity

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance.
• Large storage capacity allows for extensive data storage.
• Low power consumption contributes to energy efficiency.
• Compact package size enables integration into space-constrained devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with older memory standards.
• Higher cost compared to other memory technologies.
• Sensitivity to electrical noise and temperature variations.

Working Principles

AS4C64M16D1-6TIN operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The chip communicates with the device's memory controller through a parallel interface, allowing for fast data transfer and retrieval.

Detailed Application Field Plans

AS4C64M16D1-6TIN finds applications in various fields, including: 1