AS4C16M16S-6TINTR

Product Overview

Category

AS4C16M16S-6TINTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Requires periodic refreshing to maintain data integrity

Package

AS4C16M16S-6TINTR is typically packaged in a small outline dual in-line memory module (SODIMM) form factor. This compact package allows for easy integration into space-constrained devices.

Essence

The essence of AS4C16M16S-6TINTR lies in its ability to provide reliable and efficient data storage and retrieval functions, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C16M16S-6TINTR is commonly available in individual packages. The quantity may vary depending on the manufacturer and specific requirements.

Specifications

• Part Number: AS4C16M16S-6TINTR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Speed Grade: 6 (CL = 6)
• Operating Voltage: 3.3V
• Interface: Parallel
• Package Type: SODIMM
• Temperature Range: Industrial (-40°C to +85°C)

Detailed Pin Configuration

The pin configuration of AS4C16M16S-6TINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VSS

Functional Features

• High-speed data transfer with a clock frequency of up to 166 MHz
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for maintaining data integrity
• Low power consumption in standby mode
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data transfer rates enhance overall system performance
• Large storage capacity allows for handling complex applications
• Compact form factor enables easy integration into various devices
• Efficient burst mode operation optimizes data access

Disadvantages

• Volatile memory requires constant power supply
• Periodic refreshing is necessary to maintain data integrity
• Relatively higher power consumption compared to non-volatile memory

Working Principles

AS4C16M16S-6TINTR operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, where each capacitor represents a memory cell. The data is stored as charge in these capacitors, and it needs to be periodically refreshed to prevent loss of information.

During read and write operations, the memory controller sends commands and addresses to access specific memory locations. The data is transferred in parallel through the data bus, synchronized with the clock signal. The memory controller manages the timing and control signals to ensure accurate and efficient data transfer.

Detailed Application Field Plans

AS4C16M16S-6TINTR finds extensive application in various fields, including:

1. Personal Computers (PCs) - Used as main memory for desktops and laptops.
2. Servers - Provides high-speed memory for data processing and storage in server systems.
3. Embedded Systems - Enables efficient data handling in embedded devices such as industrial automation systems, medical equipment, and automotive electronics.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AS4C16M16S-6TINTR include:

1. AS4C32M16S-6TINTR: A higher capacity variant with 32M words x 16 bits organization.
2. AS4C8M16