RM24C128C-LSNI-B

Product Overview

Category

RM24C128C-LSNI-B belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices and systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The RM24C128C-LSNI-B has a storage capacity of 128 kilobits.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Fast access time: The device provides quick access to stored data.

Package

The RM24C128C-LSNI-B comes in a compact package, which ensures easy integration into electronic circuits and systems.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, even in the absence of power.

Packaging/Quantity

The RM24C128C-LSNI-B is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

The RM24C128C-LSNI-B has a standard 8-pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. SDA: Serial Data Line (I2C bus)
4. SCL: Serial Clock Line (I2C bus)
5. WP: Write Protect (optional)
6. A0: Address bit 0 (for device addressing)
7. A1: Address bit 1 (for device addressing)
8. NC: No Connection

Functional Features

• Random Access: The device allows random access to any location within the memory array.
• Byte and Page Write: Data can be written in individual bytes or in page mode, enhancing write efficiency.
• Hardware Write Protection: The WP pin can be used to protect the memory from accidental writes.
• Software Write Protection: The device supports software-based write protection through specific commands.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity enables storage of a large amount of data.
• Low power consumption makes it suitable for battery-powered devices.
• Fast access time allows quick retrieval of stored information.

Disadvantages

• Limited storage capacity compared to other non-volatile memory options.
• Relatively higher cost per kilobit compared to larger capacity memory devices.

Working Principles

The RM24C128C-LSNI-B utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges in floating gate transistors, which can be electrically programmed and erased. The I2C interface facilitates communication with the device, enabling read and write operations.

Detailed Application Field Plans

The RM24C128C-LSNI-B finds applications in various fields, including: 1. Consumer Electronics: Used in smart TVs, set-top boxes, and audio systems for data storage. 2. Industrial Automation: Employed in control systems and sensors for storing configuration parameters and logged data. 3. Automotive: Integrated into automotive electronics for storing vehicle settings, user preferences, and diagnostic information. 4. Medical Devices: Utilized in medical equipment for storing patient data, calibration values, and firmware updates.

Detailed and Complete Alternative Models

1. RM24C256C-LSNI-B: Offers double the storage capacity of RM24C128C-LSNI-B (256 kilobits).
2. RM24C64C-LSNI-B: Provides half the storage capacity of RM24C128C-LSNI-B (64 kilobits).
3. RM24C512C-LSNI-B: Offers four times the storage capacity of RM24C128C-LSNI-B (512 kilobits).

These alternative models provide options with varying storage capacities to suit different application requirements.

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